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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6848 Issued Date : 1994.07.29 Revised Date : 2004.08.17 Page No. : 1/4 HMBTA42 NPN EPITACIAL PLANAR TRANSISTOR Description High Voltage Transistor Absolute Maximum Ratings SOT-23 * Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 C Junction Temperature................................................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25C)............................................................................................................... 225 mW * Maximum Voltages and Currents (TA=25C) VCBO Collector to Base Voltage ......................................................................................................................... 300 V VCEO Collector to Emitter Voltage...................................................................................................................... 300 V VEBO Emitter to Base Voltage ................................................................................................................................ 6 V IC Collector Current ........................................................................................................................................ 500 mA Electrical Characteristics (TA=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 300 300 6 25 40 40 50 Typ. Max. 100 100 500 900 3 MHz pF Unit V V V nA nA mV mV IC=100uA IC=1mA IE=10uA VCB=200V VEB=6V IC=20mA, IB=2mA IC=20mA, IB=2mA IC=1mA, VCE=10V IC=10mA, VCE=10V IC=30mA, VCE=10V IC=10mA, VCE=20V, f=100MHz VCB=20V, f=1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% Test Conditions HMBTA42 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 10000 Spec. No. : HE6848 Issued Date : 1994.07.29 Revised Date : 2004.08.17 Page No. : 2/4 Saturation Voltage & Collector Current Saturation Voltage (mV) 100 VCE=10V 1000 VBE(sat) @ IC=10IB hFE 10 100 VCE(s at) @ IC=10IB 1 0.1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) Capacitance & Reverse-Biased Voltage 100 1000 Cutoff Frequency & IC 10 Cutoff Frequency (MHz) Capacitance (pF) 100 VCE=20V Cob 1 0.1 1 10 100 1000 10 1 10 100 Reverse Biased Voltage (V) Collector Current (mA) Safe Operating Area 10000 PT=1ms 1000 PT=100ms 100 PT=1s Collector Current (mA) 10 1 1 10 100 Forward Voltage (V) HMBTA42 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-23 Dimension Marking: A L Spec. No. : HE6848 Issued Date : 1994.07.29 Revised Date : 2004.08.17 Page No. : 3/4 1 3 D Pb Free Mark Pb-Free: " " (Note) Normal: None BS 1 2 Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. Pin Style: 1.Base 2.Emitter 3.Collector Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 V G DIM A B C D G H J K L S V Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25 Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65 *: Typical, Unit: mm C D H 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N K J Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMBTA42 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HE6848 Issued Date : 1994.07.29 Revised Date : 2004.08.17 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HMBTA42 HSMC Product Specification |
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